| 20 stern ave. 3phingf1s-d, new jersey 07081 u.sa telephone: (973) 376-2902 (212| 227-600b fax: (973) 376-0060 2N3855A, silicon transistor absolute maximum ratings: (25c) (unless otherwise specified) vollagei collector to emitter v emitter to base vk"" collector to base vrn,. collector (steady state) f i.: diiti potion total power (free air at 25c)i pt total power (free air at 55"c):|: pt temperature storage ts operating tj lead soldering, ytk \'.\-2" from case for 10 sec. max. tv .'io vulls '1 volls ho v,,lts l')0 nia -:u) to 150" 0 100 c tdctermined from power limitations due to saturation vollajru at thi.s point. {derate 2.67 mw/*c increase in ambient temperature above 25"c, electrical characteristics: (25c) (unicss otherwise specified) static characteristics collector cutoff current (v? = 18v) (vc. = 18v, ta = 100'c) forward current tranifer ratio (vck = 4.5v, ic ? 2ma) emitter?bate breakdown voltage (!k = collector?emitter breakdown voltage (ic = 1ma) collector?bate breakdown voltage (ic = o.lma) collector saturation voltage (ic = 10ma, in = 1ma) dynamic characteristics gain bandwidth product (vc? - 10v, ic ~ 5ma) collector?baw time con.lont (vc* ? 10v, ic ? 5ma) in, by,,,,,, min. go 4 ho 130 r-'cc output capacitance (vc? = 10v, is = 0, f = 1 mhz) c.,u input capaci>ance (vr. = 0.6v, !? = 0, f = 1 mhz) c,,, cat* capacitance ,m t [iit.mn in iiuhi; :.m> .\i;i p h h ' win f*lan hlftwtncl unl.llij u/llwarjcll' , l' '' ii i t i - lowi. |
